This interface can be used to calculate the time required to grow silicon dioxide of a specific thickness at a given temperature and ambient conditions for <100> silicon. <100> silicon is widely used in MEMS and hence is used as the base material. The ambient atmosphere can be set to either Wet O2 or Dry O2. Wet O2 or water vapor has a higher solubility in silicon dioxide than dry oxygen and hence the oxidation rate is much faster in the case of Wet O2. It is also influenced by the impurity present in the oxide and gas and the ambient pressure.
The plot shows the oxide thickness over oxidation time in a log-log plot. This is for <100> silicon for the selected temperature and ambient atmosphere. Using the crosshair, the oxidation time for any oxide thickness can be found out.